2sk2220, 2SK2221 silicon n-channel mos fet november 1996 application low frequency power amplifier complementary pair with 2sj351, 2sj352 features high power gain excellent frequency response high speed switching wide area of safe operation enhancement-mode good complementary characteristics equipped with gate protection diodes outline 1 2 3
to-3p 1. gate
2. source
(flange)
3. drain d g s
2sk2220, 2SK2221 2 ordering information type no. vdss 2sk2220 180 v 2SK2221 200 v absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage 2sk2220 v dsx 180 v 2SK2221 200 gate to source voltage v gss 20 v drain current i d 8a body to drain diode reverse drain current i dr 8a channel dissipation pch* 1 100 w channel temperature tch 150 c storage temperature tstg C55 to +150 c note 1. value at tc = 25 c
2sk2220, 2SK2221 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage 2sk2220 v (br)dsx 180 v i d = 10 ma, v gs = C10 v 2SK2221 200 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source cutoff voltage v gs(off) 0.15 1.45 v i d = 100 ma v ds = 10 v drain to source saturation voltage v ds(sat) 12v i d = 8 a, v gd = 0 v* 1 forward transfer admittance |y fs | 0.7 1.0 1.4 s i d = 3 a v ds = 10 v* 1 input capacitance ciss 600 pf v gs = C5 v v ds = 10 v f = 1 mhz output capacitance coss 800 pf reverse transfer capacitance crss 8 pf turn-on time t on 250 ns v dd = 30 v turn-off time t off 90nsi d = 4 a note 1. pulse test
2sk2220, 2SK2221 4 150 100 50 channel dissipation pch (w) 50 100 150 case temperature tc ( c) power vs. temperature derating 0 20 5 1.0 0.2 20 100 500 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 10 0.5 5 10 50 200 ta = 25? dc operation (t c = 25?) pw = 100 ms (1 shot) 2 pw = 10 ms (1 shot) 2sk2220 2SK2221 10 20 50 drain to source voltage v ds (v) typical output characteristics 8 2 10 30 40 0 4 6 4 drain current i d (a) pch = 125 w v gs =
10 v 01 2 3 6 5 7 8 9 t c = 25? 10 410 drain to source voltage v ds (v) typical output characteristics 8 2 268 0 4 6 drain current i d (a) v gs = 10 v 0 8 9 t c = 25? 7 6 5 4 3 2 1
2sk2220, 2SK2221 5 10 410 gate to source voltage v gs (v) typical transfer characteristics 8 2 268 0 4 6 25 v ds = 10 v drain current i d (a) t c = ?5? 75 1.0 0.8 2.0 gate to source voltage v gs (v) typical transfer characteristics 0.8 0.2 0.4 1.2 1.6 0 0.4 0.6 25 v ds = 10 v drain current i d (a) t c = ?5? 75 5 10 k 20 m frequency f (hz) forward transfer admittance ? yfs ? (s) 1.0 0.01 2 k 1 m 0.1 forward transfer admittance
vs. frequency t c = 25?
v ds = 10 v
i d = 2 a
0.001 0.0005 100 k 10 m 500 0.5 10 drain current i d (a) switching time t on, t off (ns) 200 20 0.2 1.0 5 5 50 100 0.1 10 2 switching time vs. drain current t off t on
2sk2220, 2SK2221 6 switching time test circuit input pw = 50 m s
duty ratio
= 1% 50 w 30 v r output l waveforms output t on 10% 10% 90% t off 90% input
2sk2220, 2SK2221 7 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
semiconductor & ic div.
nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan
tel: tokyo (03) 3270-2111
fax: (03) 3270-5109 for further information write to:
hitachi america, ltd.
semiconductor & ic div.
2000 sierra point parkway
brisbane, ca. 94005-1835
u s a
tel: 415-589-8300
fax: 415-583-4207
hitachi europe gmbh
electronic components group
continental europe
dornacher stra? 3
d-85622 feldkirchen
m?nchen
tel: 089-9 91 80-0
fax: 089-9 29 30 00
hitachi europe ltd.
electronic components div.
northern europe headquarters
whitebrook park
lower cookham road
maidenhead
berkshire sl6 8ya
united kingdom
tel: 0628-585000
fax: 0628-778322
hitachi asia pte. ltd.
16 collyer quay #20-00
hitachi tower
singapore 0104
tel: 535-2100
fax: 535-1533
hitachi asia (hong kong) ltd.
unit 706, north tower,
world finance centre,
harbour city, canton road
tsim sha tsui, kowloon
hong kong
tel: 27359218
fax: 27306071
|
